Journal article
Process-induced defects in Au-hyperdoped Si photodiodes
SQ Lim, CTK Lew, PK Chow, JM Warrender, JS Williams, BC Johnson
Journal of Applied Physics | AMER INST PHYSICS | Published : 2019
DOI: 10.1063/1.5128146
Abstract
Hyperdoped Si formed by implantation followed by pulsed laser melting is a promising material for enhanced near-infrared photodetection. To realize the full potential of this material, it is crucial to understand the nature of defects arising from the fabrication process and how these may impact device operation. Here, we identify through deep level transient spectroscopy the presence of a range of defects in the substrate depletion layer that arise from interactions between high dose ion implantation and pulsed laser melting, and investigate their annealing behavior up to 650 °C. In particular, the detection of a vacancy complex E 1 (0.35) with densities as high as 10 14 cm - 3 indicates th..
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Grants
Awarded by Australian Nanotechnology Network
Funding Acknowledgements
The authors thank Professor Tonio Buonassisi and Dr. Johnathan Mailoa from the Massachusetts Institute of Technology for sharing the diodes described in Ref. 6 for comparative measurements, and also Associate Professor Jeffrey McCallum from the University of Melbourne for useful discussions. They acknowledge AFAiiR and ANFF ACT-node at ANU for access and technical support to ion beam and fabrication facilities. They also acknowledge the U.S. Army (Contract No. FA5209-16-P-0104), the Australian Nanotechnology Network travel grant, and the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (No. CE170100012) for financial support of this project.